&lt;title&gt;The new approach in the determination of the dependency of surface charge density on semiconductor surface potential based voltage: capacity analysis of the depletion region of MIS-structures&lt;/title&gt;

G V Chucheva,A G Zhdan

doi:10.1117/12.802478

Abstract

The analysis algorithm of quasistatic C-V-characteristics of MIS-structures in the range of the depletion of the semiconductor surface of main carriers of the charge are developed. This algorithm provides the quantitative determination of a concentration of doping impurity, the <<flat bands>> voltage and efficient values of a capacity and a thickness of a gate insulator. On this data, obtained within the framework of the single experiment on the Al-SiO2-(100) n-Si MOS-structure, dependencies of ψs(Vg),Qs[ψs(Vg)] and Vi(Vg) (where ψs and Qs - a surface potential and a density of the surface charge in n-Si, Vg - a gate potential, Vi - a voltage drop on an oxide) are reduced. These dependencies without any a priori information about the state of the electronic gas under the strong accumulation or deep inversion are found. Experimental curves of ψs(Vg) and Qs[ψs(Vg)] are possible considered as the criterion of the correct of the theory of the semiconductor space charge region, take into account electron gas degeneration and quantum confinement effects, as observed maximum layered densities of electrons and holes exceed 1013cm-2. The dependency of Vi(Vg) necessary to use under investigations of the conductivity through gate insulators, particularly, in cases their small and ultrasmall of the thickness, when the leakage current is defined basically by the tunnel effect.

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