&lt;title&gt;The effect of deposition parameters on the boron nitride films grown on Si(100) by PLD with nanosecond pulses&lt;/title&gt;

C R Luculescu,Shunichi Sato,Constantin G Fenic

doi:10.1117/12.582922

<title>The effect of deposition parameters on the boron nitride films grown on Si(100) by PLD with nanosecond pulses</title>

C R Luculescu, Shunichi Sato + Show 1 more

https://doi.org/10.1117/12.582922

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Publication Date: Oct 21, 2004

Citations: 1

Affiliation: National Institute for Laser Plasma and Radiation Physics, Tohoku University

#Boron Nitride Films #Laser Wavelength + Show 8 more

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Abstract

The effects of several deposition parameters on the quality of deposited boron nitride (BN) films by pulsed laser deposition (PLD) with short laser pulses are studied. The laser fluence, nitrogen background pressure, Si(100) substrate temperature and laser wavelength were varied in order to find the maximum content of the cubic phase in our BN films. We found that laser fluence and wavelength are affecting strongly the structure of BN films while background pressure and substrate temperature are affecting slightly the film morphology.

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