Abstract
A discussion of several spectroscopic techniques using two lasers for semiconductor impurity studies is presented. The frequency of one laser is in or near the visible and the other in the far-infrared (10 to 100 microns). The second infrared laser offers several possibilities for spectroscopy in addition to the usual laser properties of high intensity, monochromaticity, and coherence. For example, an infrared laser frequency can be selected which is resonant with or near a donor, acceptor, or exciton (intrinsic or bound) binding energy in a semiconductor. The infrared laser then provides an intense and very precise probe, the effect of which may be studied in the fluorescence or absorption spectra produced by the visible laser. This might be compared to a temperature dependent fluorescence study, with the difference being that a broad thermal effect is replaced by a sharp photodissociative or optical pumping effect produced by the infrared laser. This has application to learning the role of specific impurities in recombination in devices such as an LED.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
