Abstract
BaTiO<sub>3</sub> single crystals were obtained by Remeika-method from solutions of melted salts and oxides. Radioactive Co<sup>60</sup> isotope was employed as a source of γ-radiation. Three different radiation doses were applied: 1.2 x 10<sup>7</sup> rad, 3.0 x 10<sup>8</sup> rad, and 1.3 x 10<sup>7</sup> rad. Temperature of single crystals during irradiation did not exceed 313 K. A few batches of crystals were subjected to irradiation, namely: single crystals with natural surface (after the crystal was grown), single crystals with the etched surface layer and single crystals which had been subjected to an influence of the strong direct and alternating electric fields before exposure. Both domain and defect structure of single crystals was investigated by the etching method, decorating method, optical microscopy and scanning electron microscopy. It has been found that irradiation causes destabilization of the domain walls of the head-to-head-type with a negative charge screening spontaneous polarization (<i>P<sub>s</sub></i>). The negative domains in a positive matrix, which did not grow through the whole crystal body, were found to decay under the influence of radiation. In a place previously occupied by decaying negative domains, defect clusters are observed. The investigations have shown that there is a close correlation between the domain structure and the defect structure of BaTiO<sub>3</sub> crystals.
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