Abstract
The defect structures such as surface atomic steps and point defects have been studied by computer simulation of ion scattering and channelling processes. The energy and angular distributions of ions scattered and dechannelled from semi-infinite and isolated steps on the Cu(100) and GaP(100) surface as well as the characteristics of particles channelled through Cu(100) with point defect structures have been calculated. It was shown that the low energy ion scattering and channelling can be use successfully for analysis of defect structures in single crystals.
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