<title>Pressure dependence of photoluminescence in CdTe/CdMnTe quantum wells</title>

Abstract

ABSTRACT The photoluminescence (PL) of CdTe/CdMnTe quantum wells (QWs) with well widths from 20 to 150 A has been investigated as a function of hydrostatic pressure (0 -37kbar) at liquid-helium temperature. No band crossovers were observed before the phase transition at 33 kbar. Pressure coefficients of theE"lh transitions between the quantized ground levels of the F conduction band and the heavy-hole valence band are presented for various well widths. The pressure coefficient is found to increase with decreasing well widths, as in InGaAs/GaAs strained quantum wells but unlike that observed in the GaAs/A1GaAs quantum well system. 1. INTRODUCTION Recent advances in growth methods (molecular beam epitaxy (MBE), chemical beam epitaxy (CBE), ormetallo-organic vapour-phase epitaxy (MOVPE)) have made possible the production of good qualitystructures made of TI-VT compounds such as the present CdTe/CdMnTe system. Il-VI compounds offerthe possibilityof growing structures ranging from the infrared to the blue region of the spectrum1. Inaddition, magnetic effects (when manganese is included) and piezoelectric effects (for special growthconditions) are studied in the Il-Vis more readily than in the ffl-Vs2'3.Diluted magnetic (or semimagnetic) semiconductors (DMS) such as CdMnTe have important propertiesthat are not encountered in usual semiconductors, proving themselves to be very flexible host systems in