Abstract
The study on the growth conditions of InGaAs/GaAs strained quantum wells on GaAs(111)B substrates by molecular beam epitaxy is described. The crystal quality is evaluated to investigate its dependence on growth temperature and misorientation angle of the substrate. Growth temperature of 550°C and misorientation angle between 1° and 1.5° was found to give high quality InGaAs/GaAs strained quantum wells. Furthermore we have fabricated InGaAs strained quantum well lasers on GaAs(111)B substrates, resulting in a continuous wave operation at room temperature with a threshold current density of 250 A/cm 2.
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