Abstract
A new voltage-tunable two-order GaAs/AlGaAs multistacks quantum well infrared photodetector (QWIP) has been investigated in this work. The infrared photodetector consists of GaAs/AlAs/AlGaAs double barrier quantum wells (DBQWs) and GaAs/AlGaAs square quantum wells (SQWs) with photovoltaic and photoconductive dual-mode operation in the 3 approximately 5.3 micrometers and 7.5 approximately 12 atmosphere windows. Experimental and theoretical studies have been conducted on the device physics of the intersubband transitions based on photoexcitation from ground state to different upper subbands including quasibound subband in DBQWs to virtual energy levels within the continuum in SQWs. These allow a better understanding of the optical and transport behaviors of the QWIP. The unique performance and very simple voltage-tunable switching behavior of the two-color GaAs/AlGaAs QWIP are expected to be quite competitive with HgCdTe and InSb infrared photodetectors for large area staring array imaging and two- color or multi-color detecting applications where material uniformity and simple device technology are important.
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