Abstract
The interstitial oxygen profile across the epitaxial silicon and Czochralski silicon interface has been determined using a micro Fourier transform infrared technique. Systematic measurements performed in transversal wafer cross-section configuration demonstrate the presence of interstitial oxygen in the epitaxial layer, clearly indicating that solid state outdiffusion from the substrate occurs during film preparation. Moreover, it is shown that oxygen contamination may produce precipitation phenomena inside the film.
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