Abstract
The oxygen content near epitaxial layer-substrate silicon interface was investigated using a micro Fourier transform infrared technique. Systematic measurements, performed in a transversal wafer cross-section configuration, clearly indicated the presence of interstitial oxygen in the epitaxial layer when it was grown on n-type substrates, while no evidence of oxygen in it was obtained (in concentration detectable by the infrared technique) when grown on p-type substrates. Interstitial oxygen profiles, near the epitaxial layer-substrate interface, obtained by analyzing the optical data, are reported and discussed considering different combinations of dopants in the substrate and in the epilayer.
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