Abstract
We report the fabrication and characterization of nine different infrared detector microsystems produced with two different commercial CMOS processes. They consist of micromachined thermoelectric sensors with on-chip signal conditioning circuitry. We developed a model for the performance of such microsystems based on numerical finite element analysis of the sensor and performance figures of the circuitry. The model was validated by comparing calculated and experimental sensor outputs. Deviations between modeled and measured performance were smaller than 21 percent. The usefulness of the model to optimize the layout of thermoelectric infrared sensors wit respect to overall system performance is demonstrated.
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