Abstract
Laser spectroscopy techniques have been demonstrated for monitoring of gas-phase reactants in a system designed to simulate a hydride transport vapor phase epitaxy (VPE) reactor used to grow InxGa1-xAsyP1-y. Using a single excitation wavelength, unique emissions characteristic of InCl,GaC1, P2, As2, As4, PH3, and AsH3 can be resolved under typical VPE conditions (700°-800°C, 1 atm total pressure) making this technique ideally suited for nonintrusive, real-time, simultaneous monitoring of these species during growth. Detection limits range from 10-5 to 10-8 atm, well below species concentrations typically expected under growth conditions (10-3 -10-4 atm). The details of this technique and some examples of its use in determining VPE growth conditions are presented.© (1982) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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