<title>Laser reactive ablation deposition of titanium nitride and titanium carbide films</title>

Abstract

Titanium nitride and titanium carbide films were deposited on silicon substrates by XeCl excimer laser reactive ablation of titanium in nitrogen and methane atmospheres, respectively. A series of 10,000 pulses at the fluence of approximately 5 J/cm<SUP>2</SUP> and repetition rate of 10 Hz were directed to the target. The pressure in the chamber was fixed, during every irradiation series, at a given value within the range 6 X 10<SUP>-4</SUP> - 10 mbar of N<SUB>2</SUB> or CH<SUB>4</SUB>. Very flat films with thickness exceeding 1 micrometers were deposited. The structural characteristics of the deposited films were investigated by Rutherford backscattering spectrometry, scanning electron microscopy, and by x-ray diffraction. Under specific experimental conditions very pure nitride films were deposited.