Abstract
Titanium nitride (TiN) films have been deposited on silicon substrates at low substrate temperature (400–550°C) by 50 Hz plasma-enhanced chemical vapor deposition (CVD) using a TiCl4+N2+H2 gas mixture. A substrate bias circuit with two diodes was used to enhance the deposition through ion processes. The Vickers hardness values of the deposited TiN films at Tsub ranging from 450 to 550°C were above 2200 Hv, and resistivity was below 100 µΩ·cm at Tsub≧500°C. The composition of the deposited films was investigated by the Rutherford backscattering spectroscopy (RBS) method to determine that the at.% value of the Cl content [=Cl/(Ti+N+O+C+Cl)] in the TiN films is about 1% at Tsub=550°C. X-ray diffraction (XRD) spectra revealed that the film has the preferred orientation of δ-TiN with (200) and (220) under the deposition condition of Tsub≧500°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
