Abstract
Due to the continuous technological development in microelectronics and generally in precise materials micromachining there is a continuous need to develop more effective techniques to clean impurities from the surface. Current cleaning techniques used in microelectric devices fabrication lines have an integrated action on the whole surface or on a great part of it, are polluting the ambient and are not efficient for submicron particles. Due to this needs we have studied laser cleaning of silicon wafers with regards to direct applications in semiconductor manufacturing. We have analyzed the ablation effect of laser radiation of 1.06 micrometers on different materials currently used in microelectronic industry and the cleaning effect on a silicon support.© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
