Abstract
The results of the investigation of the properties of a-SiGe:H/c-Si heterostructures fabricated by LF (55 kHz) PECVD are presented. Electrical model describing current-voltage characteristics of heterostructure in wide range of forward biases was developed. It was established that in a-SiGe:H/c-Si heterostructures the multitunnelling capture-emission mechanism prevails in low voltage range (U<1.0 V). At applied voltage higher than 1.5 V space charge limited current predominates. In the low reverse voltage range change of the transport mechanism was observed, which is connected with considerable decrease of band gap in amorphous alloy. In the high reverse voltage range ([U]>1.5 V) reverse current is controlled by the generation and recombination in depletion layer of a-SiGe:H.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
