<title>Integrated rapid isothermal processing</title>

Abstract

Rapid isothermal processing (RIP) based on incoherent sources of light is emerging as a reduced thermal budget (product of processing time and temperature) processing technique. As compared to a stand alone annealing unit the integration of RIP with other processing units leading to integrated RIP systems is very attractive for the next generation of devices and circuits. From cost and performance point of view the integrated rapid isothermal processing of these devices offers several advantages compared to their exsitu rapid isothermal annealed and furnace annealed counterparts. We have used an integrated RIP system for the insitu rapid isothermal surface cleaning of InP and GaAs substrates and insitu metallization of InP and GaAs Schottky diodes. As compared to exsitu annealing insitu rapid isothermal cleaning of InP and GaAs surfaces prior to metallization followed by insitu annealing results in improved electrical characteristics. We have also integrated a plasma source with a RIP system and studied the thermal oxidation of Si at 300C followed by an insitu rapid isothermal anneal. In this paper we also show that photo effects play a significant part in RIP. I.