&lt;title&gt;Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers&lt;/title&gt;

Vladimir A Kulbachinskii,V G Kytin,A V Golikov,V A Rogozin,S M Nekorkin,R A Lunin,A De Visser,D O Filatov,B N Zvonkov

doi:10.1117/12.514523

<title>Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers</title>

Vladimir A Kulbachinskii, V G Kytin + Show 7 more

https://doi.org/10.1117/12.514523

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Publication Date: Jun 5, 2002

#Variable Range Hopping Conductivity #Low Temperatures In Samples + Show 8 more

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Abstract

We have investigated the temperature dependence of resistance in the temperature range <i>T</i> = 0.07 - 300 K, the quantum Hall effect (qHe) and the Shubnikov-de Haas (SdH) effect in InAs/GaAs quantum dot structures in magnetic field up to 35 T. Two-dimensional Mott variable range hopping conductivity (VRHC) has been observed at low temperatures in samples with low carrier concentration. The length of localization correlates very well with the quantum dot cluster size obtained by Atomic Force Microscope (AFM). In samples with relatively high carrier concentration the transition qHe-insulator was observed.

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