Abstract
We synthesized InAs/GaAs structures with quantum dot layers and investigated electron (Si doping) lateral transport in the temperature interval 0.05 K < T < 300 K in the dark and under illumination by light over a wide interval of wavelengths in magnetic fields up to 6 T. All the samples exhibited a positive persistent photoconductivity at T < 250 K. Without illumination in the high carrier density samples the Shubnikov–de Haas effect and the quantum Hall effect were observed. Low carrier density samples showed a 2D Mott variable range hopping conductivity. The morphology of the quantum dot layers was investigated by atomic force microscopy (AFM). The length of localization exceeds the average quantum dot size and correlates very well with the quantum dot cluster size obtained by AFM.
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