Abstract
Solid phase crystallization process in thin amorphous silicon films on glass substrates was studied with application of excimer laser annealing (ELA) and rapid thermal annealing (RTA) for stimulation of nucleation. Using of ELA allowed to create homogeneous polycrystalline silicon films on glass with grain sizes up to 3 micrometers at temperatures below 550 degree(s)C. Using of RTA reduced the incubation time of nucleation from 100 to 6 hrs. The textured silicon films on glass with predominant orientation (110) and sizes of textured areas up to 30 micrometers were manufactured using the excimer laser stimulation of nucleation. The mechanism of mechanical stresses influence on grain orientation was suggested as well as it was theoretically shown, that internal stresses retard the nucleation process. Deformation addition to chemical potential difference were estimated for nucleation in amorphous silicon as 11.4 meV per nucleated atom. Retardation of crystallization after Ge implantation was observed and it was proposed to be explained within deformation mechanisms.© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Published Version
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