<title>Electrical properties of some plasma polymers obtained by remote microwave plasma chemical vapor deposition</title>

Abstract

ABSTRACT Some electrical properties of amorphous hydrogenated silicon-carbon (a-Si:C:H) films produced by remote microwave hydrogen plasma chemical vapour deposition (RHP-CVD) technique are discussed. The DC conduction of Al/a-Si:C:H/Au and AlIa-Si:C:FJJn-Si structures has been measured. Dielectric response ofthese structures has also been examined.The films are weakly conducting materials with the activation energy of the conductivity equal to 0.28 eV and 0.03 eV. MISstructures containing the amorphous silicon-carbon films as an insulator show the influence of trapping phenomena at theinsulator-silicon interface.Key words: amorphous silicon-carbon films, plasma polymers, MIS structures.1. INTRODUCTIONIn the recent years, there has been an increasing interest in plasma polymers because of the interesting chemical,mechanical, thermal and electrical properties, all of which can be quite different from conventionally polymerised films.Plasma polymers are typical insulators with the electrical conductivity ofthe order of iO' S/rn {lJ. Using different techniquesand parameters of the polymerisation process one can increase the conductivity up to the values typical for semiconductors