Abstract
A variety of cathodoluminescence depending on crystal perfection impurities and defects such as vacancies and interstitials have been investigated in undoped boron-doped and nitrogen-doped CVD diamonds. The free exciton recombination radiation is sensitive to the perfection and purity of diamonds and is located in C100sectors. The bound exciton recombination radiation depends on the amount of boron in diamonds. The 5RL center is strong in the undoped diamonds after neutron irradiation and supposed to be related to intrinsic defects such as seif-interstitials. The 2 . 16 eV and the 3 . 19 eV centers are observed prominently in the nitrogen-doped diamonds after electron irradiation and subsequent annealing. The origins of the 2. 16 center (nitrogen-vacancy complex) are located in sectors. 1.
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