Electrons diffusion study on the nitrogen-doped nanocrystalline diamond film grown by MPECVD method

Abstract

Nitrogen-doped nanocrystalline diamond (NNCD) films were deposited onto p-type silicon substrates with three different layer structures: (i) directly onto the silicon substrate (NNCD/Si), (ii) silicon with undoped nanocrystalline diamond layer which was deposited in the same way as the above mentioned NNCD by the recipe Ar/CH 4/H 2 with a ratio of 98%/1%/1% (NNCD/NCD/Si), and (iii) silicon wafer with 100 nm thickness SiO 2 layer (NNCD/SiO 2/Si). Atomic force microscopy (AFM), X-ray diffraction (XRD) and Raman spectroscopy were employed to characterize the morphology and microstructure of the as-grown nitrogen-doped diamond films. Silver colloid/silver contacts were made at to measure the current–voltage ( I– V) characteristics for the three different structures. Electrons from a CVD reactor hydrogen plasma diffuse toward the p-type silicon substrate during a deposition process under the high temperature (∼800 °C). The study concluded that the SiO 2 layer could effectively prevents the diffusion of electrons.