Abstract
The performance of electronic devices such as field-effect or bipolar transistors is determined by extrinsic factors such as wiring, intrinsic technology such as metalization and contact resistance, transit lengths, and capacitances, and by transport characteristics of the material itself. The electronic transport characteristics are in turn largely determined by the electronic bandstructure. This bandstructure can be altered or engineered through the use of strain and quantum size effects in artificially structured heterostructures, allowing improvements in device performance.
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