Abstract
Analytical 1/f noise expressions are presented for amorphous InGaZnO thin-film transistors considering the well-known power-law parameter α in the mobility equation. The drain current noise power spectral density (PSD) is derived from Ghibaudo's carrier number fluctuation model. It is found that the parameter α clarifies the relationship between the drain current noise PSD and the drain current. The relationship is verified by the available experimental data.
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