LSMO Films with Increased Temperature of MI Transition

Abstract

Epitaxial La0.67Sr0.33MnO3 thin lms with a signi cant increased temperature of metal-insulator transition (∼450 K) are prepared on single crystal MgO (001) substrates using di erent deposition techniques a dc magnetron sputtering or a pulsed laser deposition. The crystalline perfection of the lms is characterized by X-ray di raction technique (rocking curve measurements and reciprocal space maps). As a consequence of di erent methods of the lm preparation we show various types of the LSMO crystal structure. Our results indicate that all the LSMO layers grown on the MgO substrate with a lattice mis t of about 8% are relaxed.