Abstract
AbstractIn recent years the importance of selective epitaxy has continuously increased. It is a tool for controlling the production of semiconductor structures as required. This method has been demonstrated and investigated by LPE as well as VPE and MBE.Usually substrates are used having either preferentially etched channels or windows in masks to predetermine the site. In the present paper epitaxy of Pb0.85Sn0.15 Te deposits growing in isolated islands on PbTe substrates by means of LPE is investigated.
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