LPE Growth of Lattice-Matched InGaAsP on GaAs0.69P0.31 Substrates and Low Threshold Current Density Operation of Visible InGaAsP DH Lasers

Abstract

Lattice-matched InGaAsP epitaxial layers with various energy band gaps (Eg=1.874–2.115 eV) have been grown on (100)GaAs0.69P0.31 substrates by a ramp cooling liquid phase epitaxial (LPE) method. Energy band gaps and crystal compositions were determined by photoluminescence and double-crystal X-ray diffraction. Double-heterostructures were successfully grown and lased under a pulsed condition with low threshold current density (Jth=2.21 kA/cm2) and short wavelength (λp=659 nm) at room temperature. The highest external quantum efficiency was 21.7%/facet.