Abstract
We report the low threshold current density operation of strain-compensatedIn0.64Ga0.36As/In0.38Al0.62As quantumcascade lasers emitting near 4.94 μm. By employing an enlargedstrain-compensated structure and optimizing the injector dopingdensity, a rather low threshold current density of 0.57 kA/cm2 at80 K is achieved for an uncoated 20-μm-wide and 2.5-mm-long laser.
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