Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors

Abstract

A battery drivable low-voltage transparent lightly antimony(Sb)-doped SnO2 nanowire electric-double-layer (EDL) field-effect transistor (FET) is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance (∼ 2.14 μF/cm2) directly bound up with mobile ions—induced EDL (sandwiched between the top and bottom electrodes) effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V·s, current on/off ration of 2 × 104, and subthreshold gate voltage swing (S = dVgs/d(logIds)) of 140 mV/decade. The threshold voltage Vth (0.1 V) is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.