Abstract

Material systems on GaAs that can emit at 1.3 /spl mu/m have been attracting great interest from the viewpoint of realizing long-wavelength vertical-cavity surface-emitting lasers (VCSELs) that use high-reflectivity GaAs-AlAs distributed Bragg reflectors (DBRs). We previously investigated GaAsSb quantum-well (QW) layers on GaAs. By improving the GaAsSb optical quality and optimizing the laser structure, we have since achieved low-threshold lasing at a longer wavelength of 1.27 /spl mu/m in the GaAsSb-GaAs material system.

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