Abstract
Summary form only given. Commercial interest in developing inexpensive laser sources for 1.3 /spl mu/m has led to intense efforts to demonstrate GaAs-based vertical-cavity surface-emitting lasers (VCSELs) at that wavelength. To date, results include devices based on InGaAsN quantum wells, GaAsSb quantum wells and InAs quantum dots. Generally, these results have fallen short of demonstrating commercially useful devices due to relatively low output power, lack of high-temperature performance, or operation at wavelengths significantly shorter than desired. In this work, we report significant progress in improving the performance of InGaAsN quantum well VCSELs.
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