Low-Temperature-Activated Bismuth Ion-Implanted Silicon n+/p Junction

Abstract

Solid-phase epitaxially regrown n+/p junctions were investigated for sub-70 nm metal–oxide–semiconductor field-effect transistors (MOSFETs) using bismuth (Bi) ion implantation and low-temperature rapid thermal annealing. These junctions showed a small junction depth, a low sheet resistance and leakage current in low-temperature processing (700°C). The results indicated the possibility of Bi as a proper dopant for low-temperature-activated source and drain extensions that should be fabricated at a low temperature with the presence of high-k dielectric metal-electrode gate stacks in next generation MOSFETs.