Low-temperature synthesis in vacuum of c-axis oriented ferroelectric YMnO3 thin films using alkoxy-derived precursors

Abstract

Hexagonal YMnO3 thin films were prepared on Pt(111)/TiOx/SiO2/Si and Pt(111)/Al2O3(0001) substrates using alkoxy-derived precursor solutions. The films were prepared by spin coating the YMnO3 precursor solutions and then, the films were calcined and crystallized via rapid thermal annealing in oxygen or vacuum ambient. The annealing conditions and substrates were critical for crystallization of ferroelectric YMnO3 films. When annealed in vacuum, the films both on Pt(111)/TiOx/SiO2/Si and Pt(111)/Al2O3(0001) substrates crystallized to hexagonal YMnO3 and the orientation depended on the substrates. The film on Pt(111)/Al2O3(0001) had c-axis orientation and the film on Pt(111)/TiOx/SiO2/Si had no preferred orientation. In addition, it was found that crystallization behavior, orientation and morphology of YMnO3 films on Pt(111)/TiOx/SiO2/Si substrates depended on the annealing condition. The heat-treatment in vacuum at initial stage for crystallization affected the restraint of perovskite phase and formation of hexagonal phase. The following heat-treatment in oxygen promoted the c-axis orientation and grain growth. The optimum annealing procedure for crystallization of the c-axis oriented YMnO3 films on Pt(111)/TiOx/SiO2/Si was addressed.