Abstract
By means of low-temperature scanning tunneling microscopy and scanning tunneling spectroscopy we demonstrate the existence of spatial oscillations in the local electron density of states of clean Ge11121 surfaces. The oscillations appear exclusively in the vicinity of boundaries between domains with different atomic arrangements and are present only within a limited range of tunneling voltages approximately between 0.2 and 0.8 V. From the spectroscopy measurements we are able to extract the energy versus wave-vector dispersion relation of the spatial oscillations in the local electron density of states. Relying on a tight-binding based model, we are able to link the observed phenomena to two-dimensional Tamm surface states that are formed within the semiconductor band gap and that are scattered at domain boundaries where translational symmetry is broken.
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