Low-Temperature Preparation of SrBi2Ta2O9 Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Metalorganic Chemical Vapor Deposition and Their Electrical Properties

Abstract

A SrBi2Ta2O9 (SBT) thin film was prepared by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition (ECR-MOCVD). The deposition temperature dependence of the composition of the film was lesser than that of films prepared by conventional thermal MOCVD. An almost single phase of SBT was obtained at 610°C. The crystallinity of this film was higher than that of the film prepared by thermal MOCVD at 500°C and subsequent heat treatment at 800°C. The leakage current density of this film was small, on the order of 10-8 A/cm2 up to 240 kV/cm. Moreover, two fold the remanent polarization and the coercive field at an applied electric field of 400 kV/cm were 14.5 µC/cm2 and 77 kV/cm, respectively. These values were larger than those of the film prepared by thermal MOCVD at 500°C with heat treatment at 800°C.