Abstract
The growth of Inx Ga1-x As (0≤x≤0.8) on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) is systematically studied. The In distribution coefficient for the InGaAs system at low growth temperatures was larger than unity and increased with decreasing growth temperature. The surface morphology can be improved by decreasing the growth temperature. The decrease of the carrier concentration in the Si-doped InGaAs layer after annealing at temperatures ranging from 500 to 700°C was smaller in the higher In composition samples. A contact resistivity of 4×10-7 Ω·cm2 was obtained for the InGaAs contact with In composition of 0.7.
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