Abstract
In the silicon process, it is indispensable to decrease the substrate temperature of oxide-thin films. However, they cannot be synthesized at low temperatures because of reduction in the efficiency of oxidation in a high vacuum and the surface migration of atoms at low temperatures. Barium titanate (BaTiO3) thin films for example were deposited by a molecular beam epitaxy (MBE) system. The epitaxial temperature of BaTiO3 thin films on strontium titanate (SrTiO3) single crystals decreased from 600ºC to 400 ºC by irradiation of positive oxygen ions with low energy generated from an electron cyclotron resonance source (ECR-gun). The energy of ionized oxygen fluxes was controlled by two voltages: the accelerating voltage (Va) and the bias voltage (Vb). At 400 ºC the BaTiO3 thin films were epitaxiaUy grown at Va=+50 V and Vb=100 V. The irradiation of low-energy positive oxygen ions was effective for both oxidation in a high vacuum and reducing crystallization temperature
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