Low-temperature deposited Cu electrode on chip inductors by abnormal glow discharge plasma with arc source

Abstract

A new preparation method of Cu electrodes of chip inductors by an abnormal glow discharge technique with arc source at low temperature is presented. SEM observed the microstructure of the Cu electrode joints and EDX detected the interfacial diffusion between the electrodes and the ceramic matrix. The results show that the new technique can effectively suppress interfacial diffusion and Cu oxidation whereas reserve good adhesion in the electrode layer due to low deposition temperature, which can be achieved by suitable control of glow discharge voltage. Consequently, the compromise magnetic properties of the samples can be obtained.