Abstract
Low-resistance contacts fabricated by selenium passivation between Ti and n-type Si(100) substrates have been characterized by low-temperature I-V, four-point probe and circular transmission line methods. The Ti-Si contacts on Se- passivated samples demonstrate a significant reduction in Schottky barrier height over control samples in low- temperature I-V. Sheet resistance of the contacts on Se- passivated 1019 cm-3 doped n-type Si(100) substrates shows a 30% reduction as compared with control samples. Accordingly, the extracted contact resistance decreases by about one order of magnitude for samples with different Ti thicknesses and different annealing temperatures. A 125%-2900% reduction in contact resistivity is achieved by Se passivation on highly- doped n-type SOI substrates with 500 Aå un-doped Si buffer layer. The reduction in contact resistance is attributed to the minimization of interface states between Ti and Si(100) surface.
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