Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier

Qiurong He Qiurong He,Milton Feng Milton Feng

doi:10.1109/jssc.2004.827801

Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier

Qiurong He Qiurong He, Milton Feng Milton Feng

https://doi.org/10.1109/jssc.2004.827801

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Journal: IEEE Journal of Solid-state Circuits	Publication Date: Jun 1, 2004
Citations: 33

Affiliation: University of Illinois Urbana-Champaign

#Low-noise Amplifiers #Output IP3 + Show 8 more

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Abstract

We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than /spl plusmn/1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated 54-mW dc power. Comparable circuit performance was also obtained in the lumped LNA while utilizing only one-fifth the chip area of the distributed LNA.

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