Abstract
A high power-added efficiency Al/sub 0.5/Ga/sub 0.5/As/InGaAs enhancement-mode pHEMTs with benzocyclobutene (BCB) passivated layer are fabricated and characterized. This passivation technology takes advantages of the low dielectric permittivity (2.7) and a low loss tangent (0.0008), which simplifies the passivation process for microwave power device. In this work, we not only suppress the drain-source breakdown voltage but also improve the device power performance under a high input power swing by using a BCB passivation layer. The passivated 1.0 /spl mu/m-long gate pHEMTs exhibit a higher off-state performance than unpassivated ones. The maximum output power under a 2.4 GHz operation is 118 mW/mm, with a linear power gain of 11.1 dB, and a power-added efficiency of 60%. These characteristics demonstrate a great potential for BCB passivated E-mode pHEMTs on the large-signal microwave power device applications.
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