Low-frequency noise in amorphous indium–gallium–zinc oxide thin-film transistors with an inverse staggered structure and an SiO2 gate insulator

Abstract

We report the low-frequency noise (LFN) behavior of amorphous indium–gallium–zinc oxide thin-film transistors with an inverse staggered structure and an SiO2 gate insulator. The normalized noise power spectral density depended on channel length, L, with the form 1/L2, and on the gate bias voltage, VG, and threshold voltage, VTH, with the form 1/(VG − VTH)β where 1.5 < β < 2.1. In addition, the scattering constant α was less than 105 Ω. These results suggest that the contact resistance has a significant role in the LFN behavior and the charge-carrier density fluctuation is the dominant origin of LFN.