Low-field acoustic phonon limited mobility in GNRs

Abstract

Since its fabrication in 2004 by A. Geim, K. Novoselov and colleagues at University of Manchester [1], graphene has been considered as a promising candidate material for future nanoelectronics applications. This is due to its high mobility and excellent thermal conductivity. Although graphene is a zero band gap semiconductor but by patterning it into graphene nanoribbons (GNR) (i.e. ribbons a few nanometers wide), nonzero band gap can be achieved. In order to use GNR in electronic devices, it is essential to study its mobility and the associated scattering mechanisms. As the technology develops, effects of extrinsic scattering mechanisms such as line edge roughness vanish while the intrinsic mechanisms effects such as phonon scattering become more pronounced.