Abstract
We study temperature dependent charge transport properties of pentacene field effect transistors (FET) with carbon nanotube (CNT) electrodes. The field effect mobilities at different temperatures and gate voltages follow activated hopping behavior from which we calculate an activation energy of 48meV for the CNT contacted pentacene FET. This value is lower than that of our control Pd contacted pentacene FET device (83meV). The lower activation energy of the CNT contacted devices is attributed to improved CNT/pentacene interface.
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