Abstract
Low-energy arsenic implants used in the formation of ultrashallow junctions are characterized on a high current ion implanter. Significant advantages in beam current and process throughput are demonstrated by using the arsenic dimer ion for implant energies lower than . Dimer implants require only half the dose and use twice the energy of equivalent implants, resulting in significantly reduced implant times. Process results including Thermawave (TW), sheet resistance , secondary ion mass spectrometry (SIMS) profiles, electrical test and yield show equivalence between and implants.
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