Abstract
Using modifications to the lateral layout of a commercially available Si/SiGe heterojunction bipolar process only, we demonstrate significant performance improvements in terms of the maximum frequency of oscillation, as well as the microwave noise performance. The optimized HBTs are then used in prototype MMICs in the Ku and lower Ka band. The mature Si/SiGe technology, combined with extremely compact circuit design and layout techniques, results in low-cost integrated circuits enabling consumer-oriented systems up to Ka band.
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