Abstract
The fabrication of the low voltage-driven inverter, ring oscillator, and shift resistor using n- and p-channel thin-film transistors (TFTs) based on the silicon-on-glass (SiOG) substrate was studied. The manufacturing process of n- and p-channel TFTs was the same as that of low temperature poly-Si. The field-effect mobilities of n- and p-channel TFTs fabricated in SiOG are 226 and , respectively. The TFTs exhibited a symmetric threshold voltage of and a gate voltage swing of . The total propagation delay time of the complementary metal oxide semiconductor (CMOS) inverter was at a supply voltage of . In addition, the rise and fall times of the shift register were found to be 0.5 and at a of , respectively.
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