Abstract
Abstract The conduction mechanism and the behavior of stress-induced leakage current (SILC) through the HfO 2 high- k layers in metal-oxide-semiconductor (MOS) structures have been investigated. Assisted tunneling of electrons via stress-induced interface traps and bulk oxide traps are responsible for the SILC generation in HfO 2 dielectric. This trapping process depends on the polarity of the applied gate voltage and oxide thickness. The current conduction mechanism of the HfO 2 films is dominated by Poole–Frenkel emission under substrate injection in the region from 1.5 MV/cm to 2.6 MV/cm, confirming that the SILC mechanism is related to the trapping process.
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