Abstract
SUMMARYThe structure of a proportional‐to‐absolute‐temperature (PTAT) voltage reference with MOSFETs operating in the subthreshold region is proposed. It is based on the conventional structure, operation equivalent to which is achieved from the viewpoint of relations between the voltages and currents of MOSFETs. The derived structure relaxes the occupied area. Experimental results of a PTAT voltage reference implemented on a chip as an example are presented.
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